SQ4435EY-T1_GE3

Part NumberSQ4435EY-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHANNEL 30V 15A 8SOIC

DatasheetSQ4435EY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC

To learn about the specification of SQ4435EY-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ4435EY-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ4435EY-T1_GE3.
We are offering SQ4435EY-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ4435EY-T1_GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SQ4435EY

Standard Package

2500

Manufacturer

Vishay Siliconix

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 15V

FET Feature

Power Dissipation (Max)

6.8W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories