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SQ3419AEEV-T1_GE3


SQ3419AEEV-T1_GE3

Part NumberSQ3419AEEV-T1_GE3

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQ3419AEEV-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs61mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds975pF @ 20V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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