Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2389ES-T1_GE3

SQ2389ES-T1_GE3

SQ2389ES-T1_GE3

Part NumberSQ2389ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 40V SO23

DatasheetSQ2389ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2389ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2389ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2389ES-T1_GE3.
We are offering SQ2389ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2389ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2389ES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	94mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 20V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2389ES-T1_GE3 - Related Products

	IXTQ10P50P	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-3P, PolarP™	View
	SI3433CDV-T1-E3	Vishay Siliconix, P-Channel 20V 6A (Tc) 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	DMP2033UCB9-7	Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1W (Ta) Surface Mount U-WLB1515-9,	View
	DMP2160UW-7	Diodes Incorporated, P-Channel 20V 1.5A (Ta) 350mW (Ta) Surface Mount SOT-323,	View
	STL42P6LLF6	STMicroelectronics, P-Channel 60V 42A (Tc) 100W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F6	View
	IRLMS6802TRPBF	Infineon Technologies, P-Channel 20V 5.6A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	TP2104N3-G	Microchip Technology, P-Channel 40V 175mA (Tj) 740mW (Ta) Through Hole TO-92-3,	View
	IRFR9220PBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	PMPB29XPE,115	Nexperia USA Inc., P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	NX3008PBK,215	Nexperia USA Inc., P-Channel 30V 230mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	VP2106N3-G	Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	SSM6J505NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 12A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View

SQ2389ES-T1_GE3 - Tags

SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 PDF SQ2389ES-T1_GE3 datasheet SQ2389ES-T1_GE3 specification SQ2389ES-T1_GE3 image SQ2389ES-T1_GE3 India Renesas Electronics India SQ2389ES-T1_GE3 buy SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 price SQ2389ES-T1_GE3 distributor SQ2389ES-T1_GE3 supplier SQ2389ES-T1_GE3 wholesales