SPP02N60S5HKSA1

Part NumberSPP02N60S5HKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 1.8A TO-220

DatasheetSPP02N60S5

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1

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SPP02N60S5HKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SPP02N60S5

Standard Package

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

5.5V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 25V

FET Feature

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

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