SPI80N06S2L-11

Part NumberSPI80N06S2L-11

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 55V 80A I2PAK

DatasheetSP(P,I,B)80N06S2L-11

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 55V 80A (Tc) 158W (Tc) Through Hole PG-TO262-3-1

To learn about the specification of SPI80N06S2L-11, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SPI80N06S2L-11 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SPI80N06S2L-11.
We are offering SPI80N06S2L-11 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SPI80N06S2L-11 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SP(P,I,B)80N06S2L-11

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2650pF @ 25V

FET Feature

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories