SPB35N10 G

Part NumberSPB35N10 G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 35A D2PAK

DatasheetSP(I,P,B)35N10

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2

To learn about the specification of SPB35N10 G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SPB35N10 G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SPB35N10 G.
We are offering SPB35N10 G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SPB35N10 G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SP(I,P,B)35N10

Standard Package

1000

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

44mOhm @ 26.4A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 25V

FET Feature

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories