SPB08P06PGATMA1

Part NumberSPB08P06PGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V 8.8A TO-263

DatasheetSPB08P06P G

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 8.8A (Ta) 42W (Tc) Surface Mount D²PAK (TO-263AB)

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SPB08P06PGATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SPB08P06P G

Standard Package

1000

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 25V

FET Feature

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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