SPB02N60C3ATMA1

Part NumberSPB02N60C3ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 1.8A D2PAK

DatasheetSPB02N60C3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2

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SPB02N60C3ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SPB02N60C3

Standard Package

1000

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

12.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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