SIZ200DT-T1-GE3


SIZ200DT-T1-GE3

Part NumberSIZ200DT-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIZ200DT-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1510pF @ 15V, 1600pF @ 15V
Power - Max4.3W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (3.3x3.3)

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SIZ200DT-T1-GE3 - Tags

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