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SIS903DN-T1-GE3

SIS903DN-T1-GE3

Part NumberSIS903DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET DUAL P-CHAN POWERPAK 1212

DatasheetSIS903DN

Package / CasePowerPAK® 1212-8 Dual

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual

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SIS903DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SIS903DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 10V
Power - Max	2.6W (Ta), 23W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual

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