SIS903DN-T1-GE3
SIS903DN-T1-GE3
Part Number SIS903DN-T1-GE3
Description MOSFET DUAL P-CHAN POWERPAK 1212
Package / Case PowerPAK® 1212-8 Dual
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
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SIS903DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIS903DN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V
Power - Max 2.6W (Ta), 23W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
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