Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892DN-T1-GE3

SIS892DN-T1-GE3

SIS892DN-T1-GE3

Part NumberSIS892DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8 PPAK

DatasheetSIS892DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892DN-T1-GE3.
We are offering SIS892DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS892DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	611pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892DN-T1-GE3 - Related Products

	STW7N105K5	STMicroelectronics, N-Channel 1050V 4A (Tc) 110W (Tc) Through Hole TO-247, SuperMESH5™	View
	STP7N95K3	STMicroelectronics, N-Channel 950V 7.2A (Tc) 150W (Tc) Through Hole TO-220-3, SuperMESH3™	View
	STW24N60M2	STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, MDmesh™ II Plus	View
	SI4842BDY-T1-E3	Vishay Siliconix, N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IPL60R360P6SATMA1	Infineon Technologies, N-Channel 600V 11.3A (Tc) 89.3W (Tc) Surface Mount 8-ThinPak (5x6), CoolMOS™ P6	View
	NTP082N65S3F	ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3, FRFET®, SuperFET® II	View
	IRLS4030TRL7PP	Infineon Technologies, N-Channel 100V 190A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®	View
	STP80N10F7	STMicroelectronics, N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	IXTP140N12T2	IXYS, N-Channel 120V 140A (Tc) 577W (Tc) Through Hole TO-220AB, TrenchT2™	View
	NTMFS4935NT1G	ON Semiconductor, N-Channel 30V 13A (Ta), 93A (Tc) 930mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IRFS3006TRLPBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	APL502J	Microsemi Corporation, N-Channel 500V 52A (Tc) 568W (Tc) Chassis Mount ISOTOP®,	View

SIS892DN-T1-GE3 - Tags

SIS892DN-T1-GE3 SIS892DN-T1-GE3 PDF SIS892DN-T1-GE3 datasheet SIS892DN-T1-GE3 specification SIS892DN-T1-GE3 image SIS892DN-T1-GE3 India Renesas Electronics India SIS892DN-T1-GE3 buy SIS892DN-T1-GE3 SIS892DN-T1-GE3 price SIS892DN-T1-GE3 distributor SIS892DN-T1-GE3 supplier SIS892DN-T1-GE3 wholesales