SIS698DN-T1-GE3

Part NumberSIS698DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 6.9A 1212-8

DatasheetSIS698DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 6.9A (Tc) 19.8W (Tc) Surface Mount PowerPAK® 1212-8

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SIS698DN-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIS698DN

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

195mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 50V

FET Feature

Power Dissipation (Max)

19.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case