SIS430DN-T1-GE3

Part NumberSIS430DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 35A PPAK 1212-8

DatasheetSIS430DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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SIS430DN-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIS430DN

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 12.5V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case