Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS410DN-T1-GE3

SIS410DN-T1-GE3

SIS410DN-T1-GE3

Part NumberSIS410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK 1212-8

DatasheetSIS410DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS410DN-T1-GE3.
We are offering SIS410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS410DN-T1-GE3 - Related Products

	AOD240	Alpha & Omega Semiconductor Inc., N-Channel 40V 23A (Ta), 70A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount TO-252, (D-Pak),	View
	STL18N65M2	STMicroelectronics, N-Channel 650V 8A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2	View
	BSN20BKR	Nexperia USA Inc., N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB,	View
	CSD19533Q5A	Texas Instruments, N-Channel 100V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFB33N15DPBF	Infineon Technologies, N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB, HEXFET®	View
	PMZB290UNE,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	FDT86102LZ	ON Semiconductor, N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	AOD454A	Alpha & Omega Semiconductor Inc., N-Channel 40V 20A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252, (D-Pak),	View
	BUK768R3-60E,118	Nexperia USA Inc., N-Channel 60V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SIE822DF-T1-GE3	Vishay Siliconix, N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S), TrenchFET®	View
	FDPF33N25TRDTU	ON Semiconductor, N-Channel 250V 37W (Tc) Through Hole TO-220F (LG-Formed),	View
	DMN10H220L-7	Diodes Incorporated, N-Channel 100V 1.4A (Ta) 1.3W (Ta) Surface Mount SOT-23,	View

SIS410DN-T1-GE3 - Tags

SIS410DN-T1-GE3 SIS410DN-T1-GE3 PDF SIS410DN-T1-GE3 datasheet SIS410DN-T1-GE3 specification SIS410DN-T1-GE3 image SIS410DN-T1-GE3 India Renesas Electronics India SIS410DN-T1-GE3 buy SIS410DN-T1-GE3 SIS410DN-T1-GE3 price SIS410DN-T1-GE3 distributor SIS410DN-T1-GE3 supplier SIS410DN-T1-GE3 wholesales