SIS322DNT-T1-GE3

Part NumberSIS322DNT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 38.3A 1212-8

DatasheetSiS322DNT

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS322DNT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS322DNT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS322DNT-T1-GE3.
We are offering SIS322DNT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS322DNT-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SiS322DNT

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

38.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

FET Feature

Power Dissipation (Max)

3.2W (Ta), 19.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case