Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS108DN-T1-GE3

SIS108DN-T1-GE3

SIS108DN-T1-GE3

Part NumberSIS108DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V PPAK 1212-8

DatasheetSIS108DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS108DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS108DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS108DN-T1-GE3.
We are offering SIS108DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS108DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS108DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS108DN-T1-GE3 - Related Products

	TP86R203NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 19A (Ta) 1W (Tc) Surface Mount 8-SOP, U-MOSVIII-H	View
	SIHB16N50C-E3	Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),	View
	IPZA60R080P7XKSA1	Infineon Technologies, N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7	View
	STWA88N65M5	STMicroelectronics, N-Channel 650V 84A (Tc) 450W (Tc) Through Hole TO-247, MDmesh™ V	View
	IRFZ24SPBF	Vishay Siliconix, N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D²Pak),	View
	DMNH6042SPDQ-13	Diodes Incorporated, N-Channel 60V 5.7A (Ta), 24A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	TSM70N750CH C5G	Taiwan Semiconductor Corporation, N-Channel 700V 6A (Tc) 62.5W (Tc) Through Hole TO-251 (IPAK),	View
	PSMN041-80YLX	Nexperia USA Inc., N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STWA75N60M6	STMicroelectronics, N-Channel 600V 72A (Tc) 446W (Tc) Through Hole TO-247 Long Leads, MDmesh™ M6	View
	DMN6040SSS-13	Diodes Incorporated, N-Channel 60V 5.5A (Ta) 1.5W (Ta) Surface Mount 8-SO,	View
	IPB011N04NGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	RQ3E150BNTB	Rohm Semiconductor, N-Channel 30V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View

SIS108DN-T1-GE3 - Tags

SIS108DN-T1-GE3 SIS108DN-T1-GE3 PDF SIS108DN-T1-GE3 datasheet SIS108DN-T1-GE3 specification SIS108DN-T1-GE3 image SIS108DN-T1-GE3 India Renesas Electronics India SIS108DN-T1-GE3 buy SIS108DN-T1-GE3 SIS108DN-T1-GE3 price SIS108DN-T1-GE3 distributor SIS108DN-T1-GE3 supplier SIS108DN-T1-GE3 wholesales