Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS108DN-T1-GE3

SIS108DN-T1-GE3

SIS108DN-T1-GE3

Part NumberSIS108DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V PPAK 1212-8

DatasheetSIS108DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS108DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS108DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS108DN-T1-GE3.
We are offering SIS108DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS108DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS108DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS108DN-T1-GE3 - Related Products

	IPB015N08N5ATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	IAUT300N08S5N012ATMA2	Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	SI4134DY-T1-E3	Vishay Siliconix, N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount, TrenchFET®	View
	IRF7403TRPBF	Infineon Technologies, N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	LND150N8-G	Microchip Technology, N-Channel 500V 30mA (Tj) 1.6W (Ta) Surface Mount SOT-89-3,	View
	R6024KNZ1C9	Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Through Hole TO-247,	View
	MMBF2201NT1G	ON Semiconductor, N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	SI4686DY-T1-GE3	Vishay Siliconix, N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SO, TrenchFET®, WFET®	View
	BUK9660-100A,118	Nexperia USA Inc., N-Channel 100V 26A (Tc) 106W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IPP60R280P7XKSA1	Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7	View
	BSC046N10NS3GATMA1	Infineon Technologies, N-Channel 100V 17A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	CSD17570Q5B	Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

SIS108DN-T1-GE3 - Tags

SIS108DN-T1-GE3 SIS108DN-T1-GE3 PDF SIS108DN-T1-GE3 datasheet SIS108DN-T1-GE3 specification SIS108DN-T1-GE3 image SIS108DN-T1-GE3 India Renesas Electronics India SIS108DN-T1-GE3 buy SIS108DN-T1-GE3 SIS108DN-T1-GE3 price SIS108DN-T1-GE3 distributor SIS108DN-T1-GE3 supplier SIS108DN-T1-GE3 wholesales