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SIS108DN-T1-GE3

SIS108DN-T1-GE3

Part NumberSIS108DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V PPAK 1212-8

DatasheetSIS108DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

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SIS108DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS108DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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SIS108DN-T1-GE3 - Tags

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