Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA52DP-T1-GE3

SIRA52DP-T1-GE3

SIRA52DP-T1-GE3

Part NumberSIRA52DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A PPAK SO-8

DatasheetSiRA52DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA52DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA52DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA52DP-T1-GE3.
We are offering SIRA52DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA52DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiRA52DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	7150pF @ 20V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA52DP-T1-GE3 - Related Products

	STB26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	FDD2670	ON Semiconductor, N-Channel 200V 3.6A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252, PowerTrench®	View
	IRLL014NTRPBF	Infineon Technologies, N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	SI4056DY-T1-GE3	Vishay Siliconix, N-Channel 100V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	2N7002LT1G	ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	IRFP140NPBF	Infineon Technologies, N-Channel 100V 33A (Tc) 140W (Tc) Through Hole TO-247AC, HEXFET®	View
	SI4436DY-T1-E3	Vishay Siliconix, N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRF740SPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	FQB50N06LTM	ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	TSM080N03EPQ56 RLG	Taiwan Semiconductor Corporation, N-Channel 30V 55A (Tc) 54W (Tc) Surface Mount 8-PDFN (5x6),	View
	SI2318CDS-T1-GE3	Vishay Siliconix, N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRLZ24PBF	Vishay Siliconix, N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB,	View

SIRA52DP-T1-GE3 - Tags

SIRA52DP-T1-GE3 SIRA52DP-T1-GE3 PDF SIRA52DP-T1-GE3 datasheet SIRA52DP-T1-GE3 specification SIRA52DP-T1-GE3 image SIRA52DP-T1-GE3 India Renesas Electronics India SIRA52DP-T1-GE3 buy SIRA52DP-T1-GE3 SIRA52DP-T1-GE3 price SIRA52DP-T1-GE3 distributor SIRA52DP-T1-GE3 supplier SIRA52DP-T1-GE3 wholesales