Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA24DP-T1-GE3

SIRA24DP-T1-GE3

SIRA24DP-T1-GE3

Part NumberSIRA24DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAKSO-8

DatasheetSIRA24DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA24DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA24DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA24DP-T1-GE3.
We are offering SIRA24DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA24DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA24DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2650pF @ 10V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA24DP-T1-GE3 - Related Products

	IPD80R280P7ATMA1	Infineon Technologies, N-Channel 800V 17A (Tc) 101W (Tc) Surface Mount TO-252, CoolMOS™	View
	FDD5670	ON Semiconductor, N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®	View
	STL140N6F7	STMicroelectronics, N-Channel 60V 145A (Tc) 4.8W (Ta), 125W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	STWA48N60DM2	STMicroelectronics, N-Channel 600V 40A (Tc) 300W (Tc) Through Hole TO-247 Long Leads, MDmesh™ DM2	View
	BUK9675-55A,118	Nexperia USA Inc., N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRLR3636TRPBF	Infineon Technologies, N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®	View
	IXFX320N17T2	IXYS, N-Channel 170V 320A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™	View
	IRF3710STRLPBF	Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMA8878	ON Semiconductor, N-Channel 30V 9A (Ta), 10A (Tc) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	STF11N60DM2	STMicroelectronics, N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ DM2	View
	STP11N65M5	STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ V	View
	SIR670DP-T1-GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIRA24DP-T1-GE3 - Tags

SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 PDF SIRA24DP-T1-GE3 datasheet SIRA24DP-T1-GE3 specification SIRA24DP-T1-GE3 image SIRA24DP-T1-GE3 India Renesas Electronics India SIRA24DP-T1-GE3 buy SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 price SIRA24DP-T1-GE3 distributor SIRA24DP-T1-GE3 supplier SIRA24DP-T1-GE3 wholesales