Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

Part NumberSIRA14BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30-V POWERPAK SO-8

DatasheetSiRA14BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA14BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA14BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA14BDP-T1-GE3.
We are offering SIRA14BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA14BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiRA14BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	917pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA14BDP-T1-GE3 - Related Products

	TN5325N3-G	Microchip Technology, N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3,	View
	RQ3E180AJTB	Rohm Semiconductor, N-Channel 30V 18A (Ta), 30A (Tc) 2W (Ta), 30W (Tc) Surface Mount 8-HSMT (3.2x3),	View
	BUK961R6-40E,118	Nexperia USA Inc., N-Channel 40V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDD770N15A	ON Semiconductor, N-Channel 150V 18A (Tc) 56.8W (Tc) Surface Mount D-Pak, PowerTrench®	View
	PSMN008-75B,118	Nexperia USA Inc., N-Channel 75V 75A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	FDMS7672	ON Semiconductor, N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	STF10NM60N	STMicroelectronics, N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II	View
	STP13N65M2	STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2	View
	IRLR8259TRPBF	Infineon Technologies, N-Channel 25V 57A (Tc) 48W (Tc) Surface Mount D-Pak, HEXFET®	View
	STU11N65M2	STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus	View
	STF12N50M2	STMicroelectronics, N-Channel 500V 10A (Tc) 85W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	IXFT50N30Q3	IXYS, N-Channel 300V 50A (Tc) 690W (Tc) Surface Mount TO-268, HiPerFET™	View

SIRA14BDP-T1-GE3 - Tags

SIRA14BDP-T1-GE3 SIRA14BDP-T1-GE3 PDF SIRA14BDP-T1-GE3 datasheet SIRA14BDP-T1-GE3 specification SIRA14BDP-T1-GE3 image SIRA14BDP-T1-GE3 India Renesas Electronics India SIRA14BDP-T1-GE3 buy SIRA14BDP-T1-GE3 SIRA14BDP-T1-GE3 price SIRA14BDP-T1-GE3 distributor SIRA14BDP-T1-GE3 supplier SIRA14BDP-T1-GE3 wholesales