Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3

Part NumberSIRA12BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V

DatasheetSIRA12BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA12BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA12BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA12BDP-T1-GE3.
We are offering SIRA12BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA12BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA12BDP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 38W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA12BDP-T1-GE3 - Related Products

	FDMC7692	ON Semiconductor, N-Channel 30V 13.3A (Ta), 16A (Tc) 2.3W (Ta), 29W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	FQP8N80C	ON Semiconductor, N-Channel 800V 8A (Tc) 178W (Tc) Through Hole TO-220-3, QFET®	View
	PSMN1R8-30PL,127	Nexperia USA Inc., N-Channel 30V 100A (Tc) 270W (Tc) Through Hole TO-220AB,	View
	SI7460DP-T1-GE3	Vishay Siliconix, N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRL2910PBF	Infineon Technologies, N-Channel 100V 55A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPA028N08N3GXKSA1	Infineon Technologies, N-Channel 80V 89A (Tc) 42W (Tc) Through Hole PG-TO220-FP, OptiMOS™	View
	IRFR430ATRPBF	Vishay Siliconix, N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount,	View
	IRL640STRLPBF	Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	IRLR024	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	NTMFS4852NT1G	ON Semiconductor, N-Channel 30V 16A (Ta), 155A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IPB100N04S4H2ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View
	IPL60R125P7AUMA1	Infineon Technologies, N-Channel 650V 27A (Tc) 111W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View

SIRA12BDP-T1-GE3 - Tags

SIRA12BDP-T1-GE3 SIRA12BDP-T1-GE3 PDF SIRA12BDP-T1-GE3 datasheet SIRA12BDP-T1-GE3 specification SIRA12BDP-T1-GE3 image SIRA12BDP-T1-GE3 India Renesas Electronics India SIRA12BDP-T1-GE3 buy SIRA12BDP-T1-GE3 SIRA12BDP-T1-GE3 price SIRA12BDP-T1-GE3 distributor SIRA12BDP-T1-GE3 supplier SIRA12BDP-T1-GE3 wholesales