Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882DP-T1-GE3

SIR882DP-T1-GE3

SIR882DP-T1-GE3

Part NumberSIR882DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSIR882DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882DP-T1-GE3.
We are offering SIR882DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR882DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882DP-T1-GE3 - Related Products

	FQA55N25	ON Semiconductor, N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN, QFET®	View
	NTMFS5H419NLT1G	ON Semiconductor, N-Channel 40V 29A (Ta), 155A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	CSD17309Q3	Texas Instruments, N-Channel 30V 20A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	NTMFS6H801NT1G	ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	BUK7M19-60EX	Nexperia USA Inc., N-Channel 60V 35.8A (Tc) 55W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
	IRF830ASTRLPBF	Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Surface Mount D2PAK,	View
	SSM3K341TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.8W (Ta) Surface Mount UFM, U-MOSVIII-H	View
	SQM40022EM_GE3	Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Surface Mount TO-263-7, Automotive, AEC-Q101, TrenchFET®	View
	2N7002	ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	BUK92150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTD6416ANT4G	ON Semiconductor, N-Channel 100V 17A (Tc) 71W (Tc) Surface Mount DPAK,	View
	PSMN011-100YSFX	Nexperia USA Inc., N-Channel 100V 79.5A (Ta) 152W (Ta) Surface Mount LFPAK56, Power-SO8,	View

SIR882DP-T1-GE3 - Tags

SIR882DP-T1-GE3 SIR882DP-T1-GE3 PDF SIR882DP-T1-GE3 datasheet SIR882DP-T1-GE3 specification SIR882DP-T1-GE3 image SIR882DP-T1-GE3 India Renesas Electronics India SIR882DP-T1-GE3 buy SIR882DP-T1-GE3 SIR882DP-T1-GE3 price SIR882DP-T1-GE3 distributor SIR882DP-T1-GE3 supplier SIR882DP-T1-GE3 wholesales