Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882DP-T1-GE3

SIR882DP-T1-GE3

SIR882DP-T1-GE3

Part NumberSIR882DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSIR882DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882DP-T1-GE3.
We are offering SIR882DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR882DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882DP-T1-GE3 - Related Products

	BSC040N10NS5ATMA1	Infineon Technologies, N-Channel 100V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	SQM40014EM_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, Automotive, AEC-Q101, TrenchFET®	View
	IAUT260N10S5N019ATMA1	Infineon Technologies, N-Channel 100V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5	View
	SIR606BDP-T1-RE3	Vishay Siliconix, N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STH240N75F3-6	STMicroelectronics, N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, STripFET™ III	View
	BUK9875-100A/CUX	Nexperia USA Inc., N-Channel 100V 7A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View
	DMN3021LFDF-7	Diodes Incorporated, N-Channel 30V 11.8A (Ta) 2.03W (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	IPB020N10N5LFATMA1	Infineon Technologies, N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5	View
	SIRA36DP-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FDB2614	ON Semiconductor, N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®	View
	FDB2552	ON Semiconductor, N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	SIHP240N60E-GE3	Vishay Siliconix, N-Channel 600V 12A (Tc) 78W (Tc) Through Hole TO-220AB,	View

SIR882DP-T1-GE3 - Tags

SIR882DP-T1-GE3 SIR882DP-T1-GE3 PDF SIR882DP-T1-GE3 datasheet SIR882DP-T1-GE3 specification SIR882DP-T1-GE3 image SIR882DP-T1-GE3 India Renesas Electronics India SIR882DP-T1-GE3 buy SIR882DP-T1-GE3 SIR882DP-T1-GE3 price SIR882DP-T1-GE3 distributor SIR882DP-T1-GE3 supplier SIR882DP-T1-GE3 wholesales