Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR826DP-T1-GE3

SIR826DP-T1-GE3

SIR826DP-T1-GE3

Part NumberSIR826DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIR826DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR826DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR826DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR826DP-T1-GE3.
We are offering SIR826DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR826DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR826DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 40V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR826DP-T1-GE3 - Related Products

	IRFPF50PBF	Vishay Siliconix, N-Channel 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3,	View
	SIHU6N80E-GE3	Vishay Siliconix, N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251),	View
	SI7414DN-T1-E3	Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View
	TPH7R506NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 22A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	DMN63D8LW-7	Diodes Incorporated, N-Channel 30V 380mA (Ta) 300mW (Ta) Surface Mount SOT-323,	View
	AOD7N65	Alpha & Omega Semiconductor Inc., N-Channel 650V 7A (Tc) 178W (Tc) Surface Mount TO-252, (D-Pak),	View
	STD10NF30	STMicroelectronics, N-Channel 300V 10A (Tc) 103W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, MESH OVERLAY™, MESH OVERLAY™	View
	SI7460DP-T1-GE3	Vishay Siliconix, N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	AON2260	Alpha & Omega Semiconductor Inc., N-Channel 60V 6A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),	View
	SSM3K72KFS,LF	Toshiba Semiconductor and Storage, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H	View
	IXFP38N30X3	IXYS, N-Channel 300V 38A (Tc) 240W (Tc) Through Hole TO-220, HiPerFET™	View

SIR826DP-T1-GE3 - Tags

SIR826DP-T1-GE3 SIR826DP-T1-GE3 PDF SIR826DP-T1-GE3 datasheet SIR826DP-T1-GE3 specification SIR826DP-T1-GE3 image SIR826DP-T1-GE3 India Renesas Electronics India SIR826DP-T1-GE3 buy SIR826DP-T1-GE3 SIR826DP-T1-GE3 price SIR826DP-T1-GE3 distributor SIR826DP-T1-GE3 supplier SIR826DP-T1-GE3 wholesales