Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR826DP-T1-GE3

SIR826DP-T1-GE3

SIR826DP-T1-GE3

Part NumberSIR826DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIR826DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR826DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR826DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR826DP-T1-GE3.
We are offering SIR826DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR826DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR826DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 40V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR826DP-T1-GE3 - Related Products

	BSZ050N03MSGATMA1	Infineon Technologies, N-Channel 30V 15A (Ta), 40A (Tc) 2.1W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	STD2N62K3	STMicroelectronics, N-Channel 620V 2.2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH3™	View
	STP13N80K5	STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Through Hole TO-220, SuperMESH5™	View
	TPH3R203NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 47A (Tc) 1.6W (Ta), 44W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IRLZ14PBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,	View
	IRF3805STRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	FQD2N90TM	ON Semiconductor, N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®	View
	AUIRF3205ZSTRL	Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI7106DN-T1-GE3	Vishay Siliconix, N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI2304BDS-T1-E3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRF4104PBF	Infineon Technologies, N-Channel 40V 75A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	CEDM7002AE TR	Central Semiconductor Corp, N-Channel 60V 300mA (Ta) 100mW (Ta) Surface Mount SOT-883L,	View

SIR826DP-T1-GE3 - Tags

SIR826DP-T1-GE3 SIR826DP-T1-GE3 PDF SIR826DP-T1-GE3 datasheet SIR826DP-T1-GE3 specification SIR826DP-T1-GE3 image SIR826DP-T1-GE3 India Renesas Electronics India SIR826DP-T1-GE3 buy SIR826DP-T1-GE3 SIR826DP-T1-GE3 price SIR826DP-T1-GE3 distributor SIR826DP-T1-GE3 supplier SIR826DP-T1-GE3 wholesales