Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR826ADP-T1-GE3

SIR826ADP-T1-GE3

SIR826ADP-T1-GE3

Part NumberSIR826ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSiR826ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR826ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR826ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR826ADP-T1-GE3.
We are offering SIR826ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR826ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR826ADP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 40V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR826ADP-T1-GE3 - Related Products

	BSZ42DN25NS3GATMA1	Infineon Technologies, N-Channel 250V 5A (Tc) 33.8W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	NTPF110N65S3HF	ON Semiconductor, N-Channel 650V 30A (Tc) 240W (Tc) Through Hole TO-220FP, FRFET®, SuperFET® III	View
	BUK7Y14-80EX	Nexperia USA Inc., N-Channel 80V 65A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	STW9NK95Z	STMicroelectronics, N-Channel 950V 7A (Tc) 160W (Tc) Through Hole TO-247, SuperMESH™	View
	BUK7M15-60EX	Nexperia USA Inc., N-Channel 60V 42.9A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	PSMN102-200Y,115	Nexperia USA Inc., N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IPN80R750P7ATMA1	Infineon Technologies, N-Channel 800V 7A (Tc) 7.2W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	DMN2005LPK-7	Diodes Incorporated, N-Channel 20V 440mA (Ta) 450mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	STD95N4LF3	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	STI45N10F7	STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262), DeepGATE™, STripFET™ VII	View
	IRFD224PBF	Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	SIHP12N50C-E3	Vishay Siliconix, N-Channel 500V 12A (Tc) 208W (Tc) Through Hole,	View

SIR826ADP-T1-GE3 - Tags

SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 PDF SIR826ADP-T1-GE3 datasheet SIR826ADP-T1-GE3 specification SIR826ADP-T1-GE3 image SIR826ADP-T1-GE3 India Renesas Electronics India SIR826ADP-T1-GE3 buy SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 price SIR826ADP-T1-GE3 distributor SIR826ADP-T1-GE3 supplier SIR826ADP-T1-GE3 wholesales