Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	FQU2N100TU	ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK, QFET®	View
	FDS8870	ON Semiconductor, N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	STB85NF55LT4	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	STW28N65M2	STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ M2	View
	NTMFS4927NT1G	ON Semiconductor, N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	NTGS3446T1G	ON Semiconductor, N-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 6-TSOP,	View
	IPP100N08S2L07AKSA1	Infineon Technologies, N-Channel 75V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	SIB456DK-T1-GE3	Vishay Siliconix, N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	STP3NK90Z	STMicroelectronics, N-Channel 900V 3A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH™	View
	PSMN7R6-100BSEJ	Nexperia USA Inc., N-Channel 100V 75A (Tj) 296W (Tc) Surface Mount D2PAK,	View
	SI7852ADP-T1-E3	Vishay Siliconix, N-Channel 80V 30A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BSP129H6327XTSA1	Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales