Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3

Part NumberSIR812DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

DatasheetSiR812DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR812DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR812DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR812DP-T1-GE3.
We are offering SIR812DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR812DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR812DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10240pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR812DP-T1-GE3 - Related Products

	NDB6060L	ON Semiconductor, N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB),	View
	ZVN4206GTA	Diodes Incorporated, N-Channel 60V 1A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	CSD16322Q5	Texas Instruments, N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IRF100B202	Infineon Technologies, N-Channel 100V 97A (Tc) 221W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	SIHH100N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	AOD7S65	Alpha & Omega Semiconductor Inc., N-Channel 650V 7A (Tc) 89W (Tc) Surface Mount TO-252, (D-Pak), aMOS™	View
	IRF634STRRPBF	Vishay Siliconix, N-Channel 250V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	IPB083N15N5LFATMA1	Infineon Technologies, N-Channel 150V 105A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IXFH170N25X3	IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Through Hole TO-247 (IXFH), HiPerFET™	View
	FDMS86255	ON Semiconductor, N-Channel 150V 10A (Ta), 45A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount Power56, PowerTrench®	View
	ZXMN10A08E6TA	Diodes Incorporated, N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	IRFR020TRPBF	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View

SIR812DP-T1-GE3 - Tags

SIR812DP-T1-GE3 SIR812DP-T1-GE3 PDF SIR812DP-T1-GE3 datasheet SIR812DP-T1-GE3 specification SIR812DP-T1-GE3 image SIR812DP-T1-GE3 India Renesas Electronics India SIR812DP-T1-GE3 buy SIR812DP-T1-GE3 SIR812DP-T1-GE3 price SIR812DP-T1-GE3 distributor SIR812DP-T1-GE3 supplier SIR812DP-T1-GE3 wholesales