SIR802DP-T1-GE3

Part NumberSIR802DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 30A PPAK SO-8

DatasheetSIR802DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 30A (Tc) 4.6W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8

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SIR802DP-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIR802DP

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1785pF @ 10V

FET Feature

Power Dissipation (Max)

4.6W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case