SIR800ADP-T1-GE3
SIR800ADP-T1-GE3
Part Number SIR800ADP-T1-GE3 Description MOSFET N-CH 20V PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR800ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR800ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR800ADP-T1-GE3.
We are offering SIR800ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR800ADP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR800ADP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 50.2A (Ta), 177A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.35mOhm @ 10A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) +12V, -8V Input Capacitance (Ciss) (Max) @ Vds 3415pF @ 10V FET Feature - Power Dissipation (Max) 5W (Ta), 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR800ADP-T1-GE3 - Related ProductsMore >>
SIHG22N60AE-GE3 Vishay Siliconix, N-Channel 600V 20A (Tc) 179W (Tc) Through Hole TO-247AC,
View
MCH3476-TL-H ON Semiconductor, N-Channel 20V 2A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3,
View
TSM850N06CX RFG Taiwan Semiconductor Corporation, N-Channel 60V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23,
View
IRFS4115TRLPBF Infineon Technologies, N-Channel 150V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
APT5010JLLU2 Microsemi Corporation, N-Channel 500V 41A (Tc) 378W (Tc) Chassis Mount SOT-227,
View
RD3T100CNTL1 Rohm Semiconductor, N-Channel 200V 10A (Tc) 85W (Tc) Surface Mount TO-252,
View
STF11NM80 STMicroelectronics, N-Channel 800V 11A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™
View
BSS7728NH6327XTSA2 Infineon Technologies, N-Channel 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, SIPMOS®
View
SI2318DS-T1-GE3 Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRF7480MTRPBF Infineon Technologies, N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME, HEXFET®, StrongIRFET™
View
STL190N4F7AG STMicroelectronics, N-Channel 40V 120A (Tc) 127W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™
View
IRL3713STRLPBF Infineon Technologies, N-Channel 30V 260A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
SIR800ADP-T1-GE3 - Tags
English
