Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR424DP-T1-GE3

SIR424DP-T1-GE3

SIR424DP-T1-GE3

Part NumberSIR424DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 30A PPAK SO-8

DatasheetSIR424DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR424DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR424DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR424DP-T1-GE3.
We are offering SIR424DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR424DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR424DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 10V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 41.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR424DP-T1-GE3 - Related Products

	IRF7805TRPBF	Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRL540NPBF	Infineon Technologies, N-Channel 100V 36A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	STF2HNK60Z	STMicroelectronics, N-Channel 600V 2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH™	View
	STP7NK40Z	STMicroelectronics, N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB, SuperMESH™	View
	ZXMN10B08E6TA	Diodes Incorporated, N-Channel 100V 1.6A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	TPHR8504PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	IRF510STRLPBF	Vishay Siliconix, N-Channel 100V 5.6A (Tc) 43W (Tc) Surface Mount,	View
	DMN4020LFDE-7	Diodes Incorporated, N-Channel 40V 8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	DMN62D1SFB-7B	Diodes Incorporated, N-Channel 60V 410mA (Ta) 470mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	SPP20N65C3XKSA1	Infineon Technologies, N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1, CoolMOS™	View
	FQB10N50CFTM-WS	ON Semiconductor, N-Channel 500V 10A (Tc) 143W (Tc) Surface Mount D²PAK (TO-263AB), FRFET®, QFET™	View
	AON7520	Alpha & Omega Semiconductor Inc., N-Channel 30V 48A (Ta), 50A (Tc) 6.2W (Ta), 83.3W (Tc) Surface Mount 8-DFN-EP (3.3x3.3), AlphaMOS	View

SIR424DP-T1-GE3 - Tags

SIR424DP-T1-GE3 SIR424DP-T1-GE3 PDF SIR424DP-T1-GE3 datasheet SIR424DP-T1-GE3 specification SIR424DP-T1-GE3 image SIR424DP-T1-GE3 India Renesas Electronics India SIR424DP-T1-GE3 buy SIR424DP-T1-GE3 SIR424DP-T1-GE3 price SIR424DP-T1-GE3 distributor SIR424DP-T1-GE3 supplier SIR424DP-T1-GE3 wholesales