SIR424DP-T1-GE3
SIR424DP-T1-GE3
Part Number SIR424DP-T1-GE3 Description MOSFET N-CH 20V 30A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR424DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR424DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR424DP-T1-GE3.
We are offering SIR424DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR424DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR424DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V FET Feature - Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR424DP-T1-GE3 - Related ProductsMore >>
IPA65R190CFDXKSA1 Infineon Technologies, N-Channel 650V 17.5A (Tc) 34W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™
View
BSN20BKR Nexperia USA Inc., N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB,
View
IPA075N15N3GXKSA1 Infineon Technologies, N-Channel 150V 43A (Tc) 39W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
IXTK60N50L2 IXYS, N-Channel 500V 60A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™
View
IPD60R380P6ATMA1 Infineon Technologies, N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P6
View
IPB80N06S2L06ATMA2 Infineon Technologies, N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
IRF7811AVTRPBF Infineon Technologies, N-Channel 30V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
R5016FNJTL Rohm Semiconductor, N-Channel 500V 16A (Tc) 50W (Tc) Surface Mount LPTS,
View
IXFA220N06T3 IXYS, N-Channel 60V 220A (Tc) 440W (Tc) Surface Mount TO-263, HiperFET™, TrenchT3™
View
FCH47N60NF ON Semiconductor, N-Channel 600V 45.8A (Tc) 368W (Tc) Through Hole TO-247-3, SupreMOS™
View
NTLJF4156NTAG ON Semiconductor, N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2),
View
RUM002N05T2L Rohm Semiconductor, N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
SIR424DP-T1-GE3 - Tags
English
