Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR416DP-T1-GE3

SIR416DP-T1-GE3

SIR416DP-T1-GE3

Part NumberSIR416DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 50A PPAK SO-8

DatasheetSIR416DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR416DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR416DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR416DP-T1-GE3.
We are offering SIR416DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR416DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR416DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR416DP-T1-GE3 - Related Products

	DMNH6012SPSQ-13	Diodes Incorporated, N-Channel 60V 50A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	NTMFS5C404NLT1G	ON Semiconductor, N-Channel 40V 47A (Ta), 339A (Tc) 3.2W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STP16N65M2	STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2	View
	FDS5351	ON Semiconductor, N-Channel 60V 6.1A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IXTK5N250	IXYS, N-Channel 2500V 5A (Tc) 960W (Tc) Through Hole TO-264 (IXTK),	View
	IRFP3415PBF	Infineon Technologies, N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-247AC, HEXFET®	View
	IPB320N20N3GATMA1	Infineon Technologies, N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FDMA7670	ON Semiconductor, N-Channel 30V 11A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	MCB150N06YB-TP	Micro Commercial Co, N-Channel 60V 150A (Tc) 187W (Tc) Surface Mount D2PAK,	View
	R8002ANX	Rohm Semiconductor, N-Channel 800V 2A (Tc) 35W (Tc) Through Hole TO-220FM,	View
	DMN63D8LW-13	Diodes Incorporated, N-Channel 30V 380mA (Ta) 300mW (Ta) Surface Mount SOT-323,	View
	IRLD120PBF	Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View

SIR416DP-T1-GE3 - Tags

SIR416DP-T1-GE3 SIR416DP-T1-GE3 PDF SIR416DP-T1-GE3 datasheet SIR416DP-T1-GE3 specification SIR416DP-T1-GE3 image SIR416DP-T1-GE3 India Renesas Electronics India SIR416DP-T1-GE3 buy SIR416DP-T1-GE3 SIR416DP-T1-GE3 price SIR416DP-T1-GE3 distributor SIR416DP-T1-GE3 supplier SIR416DP-T1-GE3 wholesales