Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR416DP-T1-GE3

SIR416DP-T1-GE3

SIR416DP-T1-GE3

Part NumberSIR416DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 50A PPAK SO-8

DatasheetSIR416DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR416DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR416DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR416DP-T1-GE3.
We are offering SIR416DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR416DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR416DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR416DP-T1-GE3 - Related Products

	STD4N90K5	STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	STS11NF30L	STMicroelectronics, N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II	View
	BUK9Y38-100E,115	Nexperia USA Inc., N-Channel 100V 30A (Tc) 94.9W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	TSM126CX RFG	Taiwan Semiconductor Corporation, N-Channel 600V 30mA (Tc) 500mW (Ta) Surface Mount SOT-23,	View
	FQD2N60CTM	ON Semiconductor, N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak, QFET®	View
	TSM220NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),	View
	NVD5C478NLT4G	ON Semiconductor, N-Channel 40V 14A (Ta), 45A (Tc) 3W (Ta), 30W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	IRF3710ZPBF	Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®	View
	TK50P04M1(T6RSS-Q)	Toshiba Semiconductor and Storage, N-Channel 40V 50A (Ta) 60W (Tc) Surface Mount DP, U-MOSVI-H	View
	SUM70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	STH6N95K5-2	STMicroelectronics, N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2Pak-2, MDmesh™ K5	View
	IXFT150N30X3HV	IXYS, N-Channel 300V 150A (Tc) 890W (Tc) Surface Mount TO-268HV, HiPerFET™	View

SIR416DP-T1-GE3 - Tags

SIR416DP-T1-GE3 SIR416DP-T1-GE3 PDF SIR416DP-T1-GE3 datasheet SIR416DP-T1-GE3 specification SIR416DP-T1-GE3 image SIR416DP-T1-GE3 India Renesas Electronics India SIR416DP-T1-GE3 buy SIR416DP-T1-GE3 SIR416DP-T1-GE3 price SIR416DP-T1-GE3 distributor SIR416DP-T1-GE3 supplier SIR416DP-T1-GE3 wholesales