Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR180DP-T1-RE3

SIR180DP-T1-RE3

SIR180DP-T1-RE3

Part NumberSIR180DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60V POWERPAK SO-8

DatasheetSIR180DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 32.4A (Ta), 60A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR180DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR180DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR180DP-T1-RE3.
We are offering SIR180DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR180DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR180DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	32.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4030pF @ 30V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR180DP-T1-RE3 - Related Products

	BUK764R0-40E,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRL630PBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	SSM3K357R,LF	Toshiba Semiconductor and Storage, N-Channel 60V 650mA (Ta) 1W (Ta) Surface Mount SOT-23F, π-MOSV	View
	FQPF8N60C	ON Semiconductor, N-Channel 600V 7.5A (Tc) 48W (Tc) Through Hole TO-220F, QFET®	View
	SQR70090ELR_GE3	Vishay Siliconix, N-Channel 100V 86A (Tc) 136W (Tc) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, TrenchFET®	View
	ZVN3320FTA	Diodes Incorporated, N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	CPC5602CTR	IXYS Integrated Circuits Division, N-Channel 350V 5mA (Ta) 2.5W (Ta) Surface Mount SOT-223,	View
	STB14NM50N	STMicroelectronics, N-Channel 500V 12A (Tc) 90W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	STP100N8F6	STMicroelectronics, N-Channel 80V 100A (Tc) 176W (Tc) Through Hole TO-220, STripFET™ F6	View
	2N7002KW	ON Semiconductor, N-Channel 60V 310mA (Ta) 350mW (Ta) Surface Mount SC-70 (SOT323),	View
	FDP8N50NZ	ON Semiconductor, N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3, UniFET™	View
	IRFZ46NSTRLPBF	Infineon Technologies, N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D2PAK, HEXFET®	View

SIR180DP-T1-RE3 - Tags

SIR180DP-T1-RE3 SIR180DP-T1-RE3 PDF SIR180DP-T1-RE3 datasheet SIR180DP-T1-RE3 specification SIR180DP-T1-RE3 image SIR180DP-T1-RE3 India Renesas Electronics India SIR180DP-T1-RE3 buy SIR180DP-T1-RE3 SIR180DP-T1-RE3 price SIR180DP-T1-RE3 distributor SIR180DP-T1-RE3 supplier SIR180DP-T1-RE3 wholesales