SIR168DP-T1-GE3

Part NumberSIR168DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 40A PPAK SO-8

DatasheetSIR168DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR168DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR168DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR168DP-T1-GE3.
We are offering SIR168DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR168DP-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIR168DP

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 15V

FET Feature

Power Dissipation (Max)

5W (Ta), 34.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case