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SIR122DP-T1-RE3


SIR122DP-T1-RE3

Part NumberSIR122DP-T1-RE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIR122DP-T1-RE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C16.7A (Ta), 59.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs7.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950pF @ 40V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 65.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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