Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

Part NumberSIJ482DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIJ482DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ482DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ482DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ482DP-T1-GE3.
We are offering SIJ482DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ482DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ482DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 40V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 69.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ482DP-T1-GE3 - Related Products

	SISA26DN-T1-GE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	R6015FNJTL	Rohm Semiconductor, N-Channel 600V 15A (Tc) 50W (Tc) Surface Mount LPTS,	View
	RCD041N25TL	Rohm Semiconductor, N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	AO3160E	Alpha & Omega Semiconductor Inc., N-Channel 600V 40mA (Ta) 1.39W (Ta) Surface Mount SOT-23A-3,	View
	IRF540SPBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263),	View
	PSMN2R8-80BS,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View
	STW20N95K5	STMicroelectronics, N-Channel 950V 17.5A (Tc) 250W (Tc) Through Hole TO-247-3, SuperMESH5™	View
	TPN22006NH,LQ	Toshiba Semiconductor and Storage, N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	IRL3705ZSTRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2PAK, HEXFET®	View
	DMN3150L-7	Diodes Incorporated, N-Channel 28V 3.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	APT7M120B	Microsemi Corporation, N-Channel 1200V 8A (Tc) 335W (Tc) Through Hole TO-247 [B],	View
	SUP57N20-33-E3	Vishay Siliconix, N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®	View

SIJ482DP-T1-GE3 - Tags

SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 PDF SIJ482DP-T1-GE3 datasheet SIJ482DP-T1-GE3 specification SIJ482DP-T1-GE3 image SIJ482DP-T1-GE3 India Renesas Electronics India SIJ482DP-T1-GE3 buy SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 price SIJ482DP-T1-GE3 distributor SIJ482DP-T1-GE3 supplier SIJ482DP-T1-GE3 wholesales