SIJ470DP-T1-GE3
SIJ470DP-T1-GE3
Part Number SIJ470DP-T1-GE3 Description MOSFET N-CH 100V 58.8A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIJ470DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ470DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ470DP-T1-GE3.
We are offering SIJ470DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIJ470DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIJ470DP Standard Package 3000 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 58.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 50V FET Feature - Power Dissipation (Max) 5W (Ta), 56.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIJ470DP-T1-GE3 - Related ProductsMore >>
BSS169H6327XTSA1 Infineon Technologies, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
FCP104N60F ON Semiconductor, N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3, HiPerFET™, Polar™
View
IRLL3303TRPBF Infineon Technologies, N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
NDS331N ON Semiconductor, N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
View
BUK7E3R5-60E,127 Nexperia USA Inc., N-Channel 60V 120A (Tc) 293W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™
View
PSMN4R3-100ES,127 Nexperia USA Inc., N-Channel 100V 120A (Tc) 338W (Tc) Through Hole I2PAK,
View
FDC3512 ON Semiconductor, N-Channel 80V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
PSMN6R0-30YLB,115 Nexperia USA Inc., N-Channel 30V 71A (Tc) 58W (Tc) Surface Mount LFPAK56, Power-SO8,
View
IXTH04N300P3HV IXYS, N-Channel 3000V 400mA (Tc) 104W (Tc) Through Hole TO-247HV,
View
STL12N60M2 STMicroelectronics, N-Channel 600V 6.5A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2
View
ZVN2120GTA Diodes Incorporated, N-Channel 200V 320mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
IAUT165N08S5N029ATMA2 Infineon Technologies, N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
SIJ470DP-T1-GE3 - Tags
English
