SIHW47N65E-GE3

Part NumberSIHW47N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 47A TO-247AD

DatasheetSIHW47N65E-GE3

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AD

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SIHW47N65E-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIHW47N65E-GE3

Standard Package

500

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

273nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5682pF @ 100V

FET Feature

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3

All categories

SIHW47N65E-GE3

Part NumberSIHW47N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 47A TO-247AD

DatasheetSIHW47N65E-GE3

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AD

SIHW47N65E-GE3 - Product Attributes

SIHW47N65E-GE3 - Tags