SIHU6N65E-GE3

Part NumberSIHU6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 6A IPAK

DatasheetSIHU6N65E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)

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SIHU6N65E-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIHU6N65E

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 100V

FET Feature

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Long Leads, IPak, TO-251AB

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