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SIHU4N80E-GE3

SIHU4N80E-GE3

Part NumberSIHU4N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-251

DatasheetSIHU4N80E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)

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SIHU4N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU4N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	622pF @ 100V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB

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SIHU4N80E-GE3 - Tags

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