Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Part NumberSIHH26N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 25A POWERPAK8X8

DatasheetSIHH26N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH26N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60E-T1-GE3.
We are offering SIHH26N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH26N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH26N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 100V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH26N60E-T1-GE3 - Related Products

	TPH1R005PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 45V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	DMN3150L-7	Diodes Incorporated, N-Channel 28V 3.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	SQJ488EP-T1_GE3	Vishay Siliconix, N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRFB260NPBF	Infineon Technologies, N-Channel 200V 56A (Tc) 380W (Tc) Through Hole TO-220AB, HEXFET®	View
	BUK7M12-60EX	Nexperia USA Inc., N-Channel 60V 53A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	IRFR110PBF	Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	PSMN0R9-30YLDX	Nexperia USA Inc., N-Channel 30V 300A 291W Surface Mount LFPAK56, Power-SO8,	View
	FDD7N25LZTM	ON Semiconductor, N-Channel 250V 6.2A (Tc) 56W (Tc) Surface Mount D-Pak, UniFET™	View
	FDMC8878	ON Semiconductor, N-Channel 30V 9.6A (Ta), 16.5A (Tc) 2.1W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3), Power33, PowerTrench®	View
	STU8N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251, SuperMESH5™	View
	SIHP6N80E-GE3	Vishay Siliconix, N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole TO-220AB,	View
	IPD50R500CEAUMA1	Infineon Technologies, N-Channel 550V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252, CoolMOS™	View

SIHH26N60E-T1-GE3 - Tags

SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 PDF SIHH26N60E-T1-GE3 datasheet SIHH26N60E-T1-GE3 specification SIHH26N60E-T1-GE3 image SIHH26N60E-T1-GE3 India Renesas Electronics India SIHH26N60E-T1-GE3 buy SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 price SIHH26N60E-T1-GE3 distributor SIHH26N60E-T1-GE3 supplier SIHH26N60E-T1-GE3 wholesales