SIHH21N65E-T1-GE3

Part NumberSIHH21N65E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 20.3A PWRPAK8X8

DatasheetSIHH21N65E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.3A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

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SIHH21N65E-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIHH21N65E

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2404pF @ 100V

FET Feature

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN

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