SIHH11N60E-T1-GE3

Part NumberSIHH11N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 11A POWERPAK8X8

DatasheetSIHH11N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 11A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH11N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH11N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH11N60E-T1-GE3.
We are offering SIHH11N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH11N60E-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SIHH11N60E

Standard Package

Manufacturer

Vishay Siliconix

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

339mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1076pF @ 100V

FET Feature

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN

All categories