SIHG32N50D-E3


SIHG32N50D-E3

Part NumberSIHG32N50D-E3

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIHG32N50D-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package500
ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2550pF @ 100V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

SIHG32N50D-E3 - Tags

SIHG32N50D-E3 SIHG32N50D-E3 PDF SIHG32N50D-E3 datasheet SIHG32N50D-E3 specification SIHG32N50D-E3 image SIHG32N50D-E3 India Renesas Electronics India SIHG32N50D-E3 buy SIHG32N50D-E3 SIHG32N50D-E3 price SIHG32N50D-E3 distributor SIHG32N50D-E3 supplier SIHG32N50D-E3 wholesales