Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG23N60E-GE3

SIHG23N60E-GE3

SIHG23N60E-GE3

Part NumberSIHG23N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 23A TO247AC

DatasheetSiHG23N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG23N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG23N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG23N60E-GE3.
We are offering SIHG23N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG23N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHG23N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2418pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG23N60E-GE3 - Related Products

	SQM60N06-15_GE3	Vishay Siliconix, N-Channel 60V 56A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FQP4N80	ON Semiconductor, N-Channel 800V 3.9A (Tc) 130W (Tc) Through Hole TO-220-3, QFET®	View
	R6076ENZ1C9	Rohm Semiconductor, N-Channel 600V 76A (Tc) 120W (Tc) Through Hole TO-247,	View
	IPU95R2K0P7AKMA1	Infineon Technologies, N-Channel 950V 4A (Tc) 37W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	SQJ886EP-T1_GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IPD90N04S404ATMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™	View
	TPN1600ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	CEDM7001VL TR	Central Semiconductor Corp, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	SI7120ADN-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IAUT300N10S5N015ATMA1	Infineon Technologies, N-Channel 100V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5	View
	AON7522E	Alpha & Omega Semiconductor Inc., N-Channel 30V 21A (Ta), 34A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-DFN (3x3),	View
	CSD17579Q5A	Texas Instruments, N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View

SIHG23N60E-GE3 - Tags

SIHG23N60E-GE3 SIHG23N60E-GE3 PDF SIHG23N60E-GE3 datasheet SIHG23N60E-GE3 specification SIHG23N60E-GE3 image SIHG23N60E-GE3 India Renesas Electronics India SIHG23N60E-GE3 buy SIHG23N60E-GE3 SIHG23N60E-GE3 price SIHG23N60E-GE3 distributor SIHG23N60E-GE3 supplier SIHG23N60E-GE3 wholesales