SIHD6N65E-GE3

Part NumberSIHD6N65E-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD6N65E-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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SIDR140DP-T1-GE3	Vishay Siliconix, N-Channel 25V 79A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
SSM3K15ACT,L3F	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount CST3, U-MOSIII	View
NVTFS5C454NLWFTAG	ON Semiconductor, N-Channel 40V 85A (Tc) 55W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
SSM3K329R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII	View
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