SIHD6N65E-GE3

Part NumberSIHD6N65E-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD6N65E-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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SI4850EY-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®	View
IPW80R280P7XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 101W (Tc) Through Hole PG-TO247-3-41, CoolMOS™	View
SIR640ADP-T1-GE3	Vishay Siliconix, N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
AUIRF7640S2TR	Infineon Technologies, N-Channel 60V 5.8A (Ta), 21A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB, HEXFET®	View
TSM070NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 15A (Ta), 75A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
DMN1150UFB-7B	Diodes Incorporated, N-Channel 12V 1.41A (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
FDMS86200	ON Semiconductor, N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
SUM70060E-GE3	Vishay Siliconix, N-Channel 100V 131A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), ThunderFET®	View
APTM50UM09FAG	Microsemi Corporation, N-Channel 500V 497A (Tc) 5000W (Tc) Chassis Mount SP6,	View

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