SIHB35N60E-GE3
SIHB35N60E-GE3
Part Number SIHB35N60E-GE3 Description MOSFET N-CH 600V 32A D2PAK TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
To learn about the specification of SIHB35N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB35N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB35N60E-GE3.
We are offering SIHB35N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHB35N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHB35N60E-GE3 Standard Package 1000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB35N60E-GE3 - Related ProductsMore >>
2SK3018T106 Rohm Semiconductor, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount UMT3,
View
HAT2166H-EL-E Renesas Electronics America, N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK,
View
SIHP30N60E-E3 Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB,
View
IPW80R360P7XKSA1 Infineon Technologies, N-Channel 800V 13A (Tc) 84W (Tc) Through Hole PG-TO247-3-41, CoolMOS™ P7
View
STD5N52U STMicroelectronics, N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount DPAK, UltraFASTmesh™
View
IPW60R040C7XKSA1 Infineon Technologies, N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7
View
DMN1016UCB6-7 Diodes Incorporated, N-Channel 12V 5.5A (Ta) 920mW (Ta) Surface Mount U-WLB1510-6,
View
SI3460BDV-T1-GE3 Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SSM3K7002KFU,LF Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSVII-H
View
RS1G150MNTB Rohm Semiconductor, N-Channel 40V 15A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,
View
FQPF5N60C ON Semiconductor, N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F, QFET®
View
FQP44N10 ON Semiconductor, N-Channel 100V 43.5A (Tc) 146W (Tc) Through Hole TO-220-3, QFET®
View
SIHB35N60E-GE3 - Tags
English
