SIHB24N65ET1-GE3

Part NumberSIHB24N65ET1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 24A TO263

DatasheetSiHB24N65E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SIHB24N65ET1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB24N65ET1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB24N65ET1-GE3.
We are offering SIHB24N65ET1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB24N65ET1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SiHB24N65E

Standard Package

800

Manufacturer

Vishay Siliconix

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2740pF @ 100V

FET Feature

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories