Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB23N60E-GE3

SIHB23N60E-GE3

SIHB23N60E-GE3

Part NumberSIHB23N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 23A D2PAK

DatasheetSIHB23N60E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB23N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB23N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB23N60E-GE3.
We are offering SIHB23N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB23N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB23N60E-GE3
Standard Package	50
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2418pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB23N60E-GE3 - Related Products

	STP120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	FDN339AN	ON Semiconductor, N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	CSD18532NQ5B	Texas Instruments, N-Channel 60V 22A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	ZXMN2B01FTA	Diodes Incorporated, N-Channel 20V 2.1A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	FQA170N06	ON Semiconductor, N-Channel 60V 170A (Tc) 375W (Tc) Through Hole TO-3PN, QFET®	View
	RCJ120N20TL	Rohm Semiconductor, N-Channel 200V 12A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),	View
	STD2HNK60Z	STMicroelectronics, N-Channel 600V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™	View
	IRFR3710ZTRLPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®	View
	FQP13N50C	ON Semiconductor, N-Channel 500V 13A (Tc) 195W (Tc) Through Hole TO-220-3, QFET®	View
	FDD3706	ON Semiconductor, N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View
	SUD23N06-31-GE3	Vishay Siliconix, N-Channel 60V 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IPL60R365P7AUMA1	Infineon Technologies, N-Channel 650V 10A (Tc) 46W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View

SIHB23N60E-GE3 - Tags

SIHB23N60E-GE3 SIHB23N60E-GE3 PDF SIHB23N60E-GE3 datasheet SIHB23N60E-GE3 specification SIHB23N60E-GE3 image SIHB23N60E-GE3 India Renesas Electronics India SIHB23N60E-GE3 buy SIHB23N60E-GE3 SIHB23N60E-GE3 price SIHB23N60E-GE3 distributor SIHB23N60E-GE3 supplier SIHB23N60E-GE3 wholesales