Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N65E-GE3

SIHB12N65E-GE3

SIHB12N65E-GE3

Part NumberSIHB12N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 12A D2PAK

Datasheet09644147236, 37Drawing

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB12N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N65E-GE3.
We are offering SIHB12N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	09644147236, 37Drawing
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1224pF @ 100V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N65E-GE3 - Related Products

	FDMC8854	ON Semiconductor, N-Channel 30V 15A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	FCA47N60-F109	ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™	View
	IRFR1205TRPBF	Infineon Technologies, N-Channel 55V 44A (Tc) 107W (Tc) Surface Mount D-Pak, HEXFET®	View
	SIE812DF-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View
	AOD7S60	Alpha & Omega Semiconductor Inc., N-Channel 600V 7A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak), aMOS™	View
	PSMN026-80YS,115	Nexperia USA Inc., N-Channel 80V 34A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IPB65R150CFDATMA1	Infineon Technologies, N-Channel 650V 22.4A (Tc) 195.3W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	IRF2807ZSTRLPBF	Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMC86184	ON Semiconductor, N-Channel 100V 57A (Tc) 54W (Tc) Surface Mount 8-PQFN (3.3x3.3), PowerTrench®	View
	SPW20N60C3FKSA1	Infineon Technologies, N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	IPD80R2K8CEATMA1	Infineon Technologies, N-Channel 800V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CE	View
	R6020KNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 231W (Tc) Surface Mount TO-263,	View

SIHB12N65E-GE3 - Tags

SIHB12N65E-GE3 SIHB12N65E-GE3 PDF SIHB12N65E-GE3 datasheet SIHB12N65E-GE3 specification SIHB12N65E-GE3 image SIHB12N65E-GE3 India Renesas Electronics India SIHB12N65E-GE3 buy SIHB12N65E-GE3 SIHB12N65E-GE3 price SIHB12N65E-GE3 distributor SIHB12N65E-GE3 supplier SIHB12N65E-GE3 wholesales