Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N65E-GE3

SIHB12N65E-GE3

SIHB12N65E-GE3

Part NumberSIHB12N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 12A D2PAK

Datasheet09644147236, 37Drawing

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB12N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N65E-GE3.
We are offering SIHB12N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	09644147236, 37Drawing
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1224pF @ 100V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N65E-GE3 - Related Products

	IRLZ24PBF	Vishay Siliconix, N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB,	View
	SI4896DY-T1-GE3	Vishay Siliconix, N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IXTA150N15X4	IXYS, N-Channel 150V 150A (Tc) 480W (Tc) Surface Mount TO-263AA,	View
	STD80N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 70W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	BUK72150-55A,118	Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	PSMN1R8-30BL,118	Nexperia USA Inc., N-Channel 30V 100A (Tc) 270W (Tc) Surface Mount D2PAK,	View
	FDMS86368-F085	ON Semiconductor, N-Channel 80V 80A (Tc) 214W (Tc) Surface Mount Power56, Automotive, AEC-Q101, PowerTrench®	View
	R6018JNJGTL	Rohm Semiconductor, N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS (D2PAK),	View
	DMTH4007LPS-13	Diodes Incorporated, N-Channel 40V 15.5A (Ta), 100A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount PowerDI5060-8,	View
	IPP040N06N3GXKSA1	Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	BSC026NE2LS5ATMA1	Infineon Technologies, N-Channel 25V 24A (Ta), 82A (Tc) 2.5W (Ta), 29W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	RCD075N19TL	Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View

SIHB12N65E-GE3 - Tags

SIHB12N65E-GE3 SIHB12N65E-GE3 PDF SIHB12N65E-GE3 datasheet SIHB12N65E-GE3 specification SIHB12N65E-GE3 image SIHB12N65E-GE3 India Renesas Electronics India SIHB12N65E-GE3 buy SIHB12N65E-GE3 SIHB12N65E-GE3 price SIHB12N65E-GE3 distributor SIHB12N65E-GE3 supplier SIHB12N65E-GE3 wholesales