SIE854DF-T1-GE3


SIE854DF-T1-GE3

Part NumberSIE854DF-T1-GE3

Manufacturer

Description

Datasheet

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIE854DF-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.2mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 50V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

SIE854DF-T1-GE3 - Tags

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