SIE820DF-T1-E3


SIE820DF-T1-E3

Part NumberSIE820DF-T1-E3

Manufacturer

Description

Datasheet

Package / Case10-PolarPAK® (S)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIE820DF-T1-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (S)
Package / Case10-PolarPAK® (S)

SIE820DF-T1-E3 - Tags

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