Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

Part NumberSIDR668DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V

DatasheetSIDR668DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR668DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR668DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR668DP-T1-GE3.
We are offering SIDR668DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR668DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR668DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	108nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 50V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR668DP-T1-GE3 - Related Products

	SSM6K514NU,LF	Toshiba Semiconductor and Storage, N-Channel 40V 12A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H	View
	IRFP450APBF	Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,	View
	STB28N60M2	STMicroelectronics, N-Channel 600V 22A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ II Plus	View
	DN3545N3-G	Microchip Technology, N-Channel 450V 136mA 740mW (Ta) Through Hole TO-92 (TO-226),	View
	SIHP21N60EF-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB,	View
	STD25N10F7	STMicroelectronics, N-Channel 100V 25A (Tc) 40W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VII	View
	IPP020N06NAKSA1	Infineon Technologies, N-Channel 60V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	BSS138-F085	ON Semiconductor, N-Channel 50V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23,	View
	AOD7S65	Alpha & Omega Semiconductor Inc., N-Channel 650V 7A (Tc) 89W (Tc) Surface Mount TO-252, (D-Pak), aMOS™	View
	IPB120N04S402ATMA1	Infineon Technologies, N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	NVTFS4C25NWFTAG	ON Semiconductor, N-Channel 30V 10.1A (Ta), 22.1A (Tc) 3W (Ta), 14.3W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	STD3NK50ZT4	STMicroelectronics, N-Channel 500V 2.3A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™	View

SIDR668DP-T1-GE3 - Tags

SIDR668DP-T1-GE3 SIDR668DP-T1-GE3 PDF SIDR668DP-T1-GE3 datasheet SIDR668DP-T1-GE3 specification SIDR668DP-T1-GE3 image SIDR668DP-T1-GE3 India Renesas Electronics India SIDR668DP-T1-GE3 buy SIDR668DP-T1-GE3 SIDR668DP-T1-GE3 price SIDR668DP-T1-GE3 distributor SIDR668DP-T1-GE3 supplier SIDR668DP-T1-GE3 wholesales